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| Bulletin I0124J 07/97 IR180LM..CS02CB SERIES FAST RECOVERY DIODES Junction Size: Wafer Size: VRRM Class: Passivation Process: Square 180 mils 4" 200 to 600 V Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics Parameters VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1300 mV 200 to 600 V Test Conditions TJ = 25C, IF = 20 A TJ = 25C, IRRM = 100 A (1) (1)Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 180 x 180 mils (4.57x4.57 mm) - see drawing 100 mm, with std. < 110 > flat 260 m 45 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR180LM..CS02CB Series Bulletin I0124J 07/97 Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 8 International Rectifier Device Chip Dimension in Mils 180 2 L 3 M 4 06 5 C 6 S02 CB 7 8 Type of Device: L = Wire Bondable Fast Recovery Diode Passivation Process: M = Glassivated MOAT Voltage code: Code x 100 = V RRM Metallization: C = Aluminium (Anode) - Silver (Cathode) Trr code: S02 = 200 nsec CB = Probed Uncut Die (wafer in box) Available Class 02 = 200 V 04 = 400 V 06 = 600 V None = Probed Die in chip carrier Outline Table All dimensions are in microns 2 www.irf.com IR180LM..CS02CB Series Bulletin I0124J 07/97 Wafer Layout TOP VIEW N 293 Basic Cells All dimensions are in millimeters www.irf.com 3 |
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